Ion implantation into heteroepitaxial Cd x Hg1–x Te grown by molecular-beam epitaxy

Local neutrality conception: Fermi level pinning in defective semiconductors

V. N. Brudnyı̆, S. N. Grinyaev, V. E. Stepanov · Physica B Condensed Matter · 1995 · 99 citations

Natural Sciences, Materials Science, Physics +14

Ion implantation doping of Cd_0.2Hg_0.8Te for infrared detectors

H. Ryssel, G. Lang, J.P. Biersack et al. · IEEE Transactions on Electron Devices · 1980 · 38 citations

Engineering, Materials Engineering, Materials Science +15

p-n Junction characteristics and ultimate performances of high quality 8–14 μm Hg1−xCdxTe implanted photodetectors

G. Fiorito, G. Gasparrini, F. Svelto · Infrared Physics · 1977 · 17 citations

Engineering, Materials Engineering, Materials Science +15

Cadmium mercury telluride and the new generation of photoelectronic devices

Vladimir P. Ponomarenko · Uspekhi Fizicheskih Nauk · 2003 · 17 citations · Full text

Natural Sciences, Chemistry, Materials Science +12

A model for the prediction of radiation defect profiles in the semiconductor target (HgCdTe) subjected to high power short pulsed ion beams

S. А. Shul’ga, Roger Smith · Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms · 2004 · 11 citations

Engineering, Electrical Engineering, Radiation Physics +16