Cadmium mercury telluride and the new generation of photoelectronic devices

Concepts

Natural SciencesChemistryMaterials ScienceElectronic MaterialsInorganic ChemistryPhotonicsMetalsPhotochemistryPhotoelectrochemical MaterialsRare-earth-doped MaterialsCadmium ChemistryCadmium SulfideCadmium TellurideMercury Cadmium TellurideMetal Oxide Photoelectrodes

Abstract

AE 1. AE (649). 2. . (650). 3. AE . AEAE (657). 4. AE . - - (663). 5. (664). (664). 1. AE , AE - AE AE , , AE AE- AE AE AE AE Cd x Hg 1x Te () AE AE . AE 8 14 . AE AE AE: 1970 1990 . ( AE-AE) AE - 10, 20, 60, 120 180 ( AE). AE (C.T. Elliott) () (. AE 2). , 80- AE, AE AE - - AE "" - 8 14 . AE AE. 1990 2002 . AE AE . , , , AE- AE

References

Band structure of indium antimonide

E. O. Kane · Journal of Physics and Chemistry of Solids · 1957 · 3.7K citations

Natural Sciences, Materials Science, Physics +14

Preparation and properties of HgTe and mixed crystals of HgTe-CdTe

W. D. Lawson, Steen Brøndsted Nielsen, E H Putley et al. · Journal of Physics and Chemistry of Solids · 1959 · 388 citations

Natural Sciences, Materials Science, Physics +12

CdxHg1−xTe INFRARED PHOTOVOLTAIC DETECTORS

C. Vèrié, J. Ayas · Applied Physics Letters · 1967 · 51 citations

Engineering, Materials Engineering, Materials Science +17

HgCdTe charge-coupled device technology∗

M. A. Kinch, R. A. Chapman, A. Simmons et al. · Infrared Physics · 1980 · 29 citations

Engineering, Electrical Engineering, Materials Science +12

n-channel insulated-gate field-effect transistors in Hg1−xCdxTe with x=0.215

Y. Nemirovsky, S. Margalit, I. Kidron · Applied Physics Letters · 1980 · 22 citations

Engineering, Electrical Engineering, Materials Science +12