C. Vèrié - Concepedia

Author

C. Vèrié

Centre National de la Recherche Scientifique

Also Known As

C Verie, C Vèrié, C. Ve`rie´, C. Verie, C. Verié, C. Vèrié, C. Vérié, Ch. Vèrié

Publications

752

Citations

H-Index

Concepts

All Affiliations

Centre National de la Recherche Scientifique Chimie du Solide et Energie Centre de Recherche sur l'Hétéro-Epitaxie et ses Applications

About

C. Vèrié is an author at Centre National de la Recherche Scientifique specializing in engineering, applied physics, and optoelectronics.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	15	18	487
2	Applied Physics	13	15	424
3	Electrical Engineering	10	10	279
4	Natural Sciences	2	2	31
5	Chemistry	1	1	18

C. Vèrié

Publications

527

Citations

H-Index

Page 1

	Year	Citations
Cd<i>x</i>Hg1−<i>x</i>Te INFRARED PHOTOVOLTAIC DETECTORS C. Vèrié, J. Ayas Applied Physics Letters EngineeringP-n JunctionsOptoelectronic DevicesPhotovoltaicsSemiconductor Nanostructures	1967	51
Influence of photon recycling on lifetime and diffusion coefficient in GaAs Ph. Renaud, Frédéric Raymond, B. Bensaïd, Journal of Applied Physics PhotonicsElectrical EngineeringPhotoluminescenceEngineeringEffective Lifetime	1992	49
Gigahertz cutoff frequency capabilities of CdHgTe photovoltaic detectors at 10.6 &#181; C. Vèrié, M. Sirieix IEEE Journal of Quantum Electronics Thz PhotonicsElectrical EngineeringFinal PhotodiodesEngineeringApplied Physics	1972	45
High pressure dependence of the electronic properties of bound states in n-type GaAs M. Leroux, G. Neu, C. Vèrié Solid State Communications SemiconductorsSemiconductor TechnologyEngineeringPhysicsApplied Physics	1986	40
Heteroepitaxy of GaAs on Si: The effect of <i>i</i> <i>n</i> <i>s</i> <i>i</i> <i>t</i> <i>u</i> thermal annealing under AsH3 A. Freundlich, J. C. Grenet, G. Neu, Applied Physics Letters	1988	40
Bandgap spin-orbit splitting resonance effects in Hg1-xCdxTe alloys C. Vèrié, Frédéric Raymond, J. Besson, Journal of Crystal Growth SpintronicsBandgap Spin-orbitEngineeringPhysicsCondensed Matter Physics	1982	35
Minority-carrier lifetime study of the pressure induced Γ-<i>X</i> crossover in GaAs M. Leroux, G. Pelous, Frédéric Raymond, Applied Physics Letters EngineeringPhotoluminescence ExperimentsIndirect LuminescenceMinority-carrier Lifetime StudyLuminescence Property	1985	30
Evidence by Raman spectroscopy and x-ray diffraction of a strong influence of H2O traces on the metalorganic vapor phase epitaxy of GaAs on Si A. Freundlich, A. Leycuras, J. C. Grenet, Applied Physics Letters Materials EngineeringIi-vi SemiconductorElectrical EngineeringEpitaxial GrowthEngineering	1987	30
Expected pronounced strengthening of II–VI lattices with beryllium chalcogenides C. Vèrié Materials Science and Engineering B Materials ScienceMaterials EngineeringTransition Metal ChalcogenidesEngineeringCondensed Matter Physics	1997	29
Influence of luminescence self-absorption on photoluminescence decay in GaAs B. Bensaïd, Frédéric Raymond, M. Leroux, Journal of Applied Physics SemiconductorsWide-bandgap SemiconductorElectrical EngineeringPhotoluminescenceEngineering	1989	29

Page 1