C. Vèrié

Cd<i>x</i>Hg1−<i>x</i>Te INFRARED PHOTOVOLTAIC DETECTORS

C. Vèrié, J. Ayas · Applied Physics Letters · 1967 · 51 citations

Engineering, P-n Junctions, Optoelectronic Devices +16

Influence of photon recycling on lifetime and diffusion coefficient in GaAs

Ph. Renaud, Frédéric Raymond, B. Bensaïd et al. · Journal of Applied Physics · 1992 · 49 citations

Photonics, Electrical Engineering, Photoluminescence +11

Gigahertz cutoff frequency capabilities of CdHgTe photovoltaic detectors at 10.6 &amp;#181;

C. Vèrié, M. Sirieix · IEEE Journal of Quantum Electronics · 1972 · 45 citations

Thz Photonics, Electrical Engineering, Final Photodiodes +12

High pressure dependence of the electronic properties of bound states in n-type GaAs

M. Leroux, G. Neu, C. Vèrié · Solid State Communications · 1986 · 40 citations

Semiconductors, Semiconductor Technology, Engineering +9

Heteroepitaxy of GaAs on Si: The effect of <i>i</i> <i>n</i> <i>s</i> <i>i</i> <i>t</i> <i>u</i> thermal annealing under AsH3

A. Freundlich, J. C. Grenet, G. Neu et al. · Applied Physics Letters · 1988 · 40 citations