Thermal performance of a dual 1.2 kV, 400 a silicon-carbide MOSFET power module

Abstract

Power electronics are reaching the temperature limits of silicon; therefore alternative materials such as silicon carbide (SiC) are currently being explored. An all SiC 1.2 kV, 400 A dual MOSFET power module has been fabricated and tested for thermal performance. The module was designed as a dropin replacement for standard commercial modules with an integrated liquid cooling system that reduces thermal resistance. The heat sink has been experimentally tested up to 400 A (158 W/cm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> ) showing a device temperature rise of as little as 24°C. Thermal modeling was also performed and the results were compared to experimental data.