High transmission gain integrated antenna on extremely high resistivity Si for ULSI wireless interconnect

Abstract

We have demonstrated the highest transmission gain integrated dipole antenna on Si reported so far, to use as an integrated antenna for the purpose of ULSI on-chip wireless interconnection. A 2-mm long and 10-μm wide dipole antenna pair at a distance of 1 cm shows a transmission gain of -36.5 dB at 18 GHz, which is 20 dB higher than the previously reported gain. This large increase in gain is achieved by proton implantation on the Si substrate, which increased the resistivity from 10 /spl Omega/-cm to 0.1 M/spl Omega/-cm. It is also found that transmission gain can be maximized for a given resistivity by optimizing the Si substrate thickness or by inserting a low-k dielectric layer below the substrate.