IEEE Electron Device Letters · 1990 · 59 citations · 9 references
EngineeringComputer EngineeringElectrical EngineeringMemoryMicroelectronicsSemiconductor DevicesDevice ModelingDevice ReliabilityMemory DevicesMemory StorageSemiconductor ReliabilityShort-channel EffectsCharge TrappingData RetentionFlash MemoryFlash Memory DevicesFlash Memory ReliabilityLateral Electric Field EffectsNon-volatile Memory DesignOperating Point Selection
Hot-hole generation during electrical erase in flash memory cells was investigated and found to be strongly dependent on the lateral electric field of the gated diode junction. It is shown, by erasing the memory cell at a low source voltage in combination with a negative gate voltage, that the operating point can be chosen well away from the onset of avalanche. Using this erasing scheme appreciably reduces the amount of hole trapping in the tunnel oxide. As a result, data retention is significantly improved as compared with conventional erasure.< <ETX xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">></ETX>
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Reliability performance of ETOX based flash memories
G. Verma, Neal Mielke · 2003 · 49 citations
Engineering, Computer Engineering, Electrical Engineering +15