3-D topography simulator (3-D MULSS) based on a physical description of material topography

M. Fujinaga, N. Kotani

IEEE Transactions on Electron Devices · 1997 · 28 citations · 12 references

Concepts

Abstract

This paper presents a three-dimensional (3-D) topography simulator (3-D MULSS), and its applications. We focus on the description of the material surface and the algorithm of the surface advancement. Then we propose a 3-D topography simulation algorithm, with consideration of the probe size of observation, and based on the integration formula of the balance equation. Next, we show the simulation results of the 3-D MULSS: (1) isotropic deposition; (2) Aluminum-sputter deposition; (3) isotropic etching; (4) anisotropic etching; and (5) sequential process steps. These results make the accuracy of the 3-D MULSS clear, and also show that it is possible to stably simulate the sequential process steps.

References

12