Effect of randomness in the distribution of impurity ions on FET thresholds in integrated electronics

Concepts

EngineeringElectrical EngineeringMicroelectronicsSemiconductor DevicesSemiconductor MaterialsDefects In Electronic MaterialsDevice ModelingDopingField-effect TransistorsIntegrated Circuit DesignMetal-oxide-semiconductor Field-effect TransistorsDoping ControlDoping Effects On Device PerformanceDoping Effects On Electronic PropertiesMetal-oxide-semiconductor Field-effect Transistor ModelingRandom Dopant FluctuationSemiconductor Doping ProfilesSpace Charge DistributionThresholds

Abstract

A model of the effect of random fluctuations in the number of impurity atoms in the depletion layer of a field-effect transistor (FET) is presented and analyzed. It is conducted that the range of space charge per unit area that must be anticipated on a chip containing N FET's each of area A is /spl Delta/S=q(2 ln N)/SUP 1/2/A/SUP -1/4/n~/SUP 1/2/. n~ is the doping level of the substrate.

References

Physics of Semiconductor Devices

Geoffrey Pridham · Electronics and Power · 1970 · 4K citations

Engineering, Electrical Engineering, Physics +12

The Si-SiO<sub>2</sub>Interface - Electrical Properties as Determined by the Metal-Insulator-Silicon Conductance Technique

E. H. Nicollian, A. Goetzberger · Bell System Technical Journal · 1967 · 1.8K citations

Engineering, Electrical Engineering, Materials Science +17

W. Shockley · Solid-State Electronics · 1961 · 917 citations

Engineering, Materials Science, Physics +12

Fundamental limitations in microelectronics—I. MOS technology

B. Hoeneisen, Carver Mead · Solid-State Electronics · 1972 · 364 citations

Engineering, Electrical Engineering, Microelectronics +13