Journal of The Electrochemical Society · 2007 · 12 citations · 7 references
EngineeringMaterials EngineeringMaterials ScienceElectronic MaterialsSemiconductor MaterialsThin FilmsChemical Vapor DepositionMemory DevicesSemiconductor Device MaterialsSemiconductor InterfacesSemiconductor PhysicsSemiconductor Thin FilmsChalcogenide Thin FilmsChemical Vapor Deposition PrecursorsDoping In Thin FilmsEpitaxial Film GrowthFilm Growth MechanismsMemory MaterialsMetalorganic Chemical Vapor DepositionPhase-change Memory
The chalcogenide thin films for phase change memory applications were prepared on substrates by metallorganic chemical vapor deposition (MOCVD) using , , and precursors. The films were grown by the tellurium deposition at on Ge films deposited on a TiAlN electrode in the presence of Sb at . The film growth by the tellurium deposition on Ge films depends on both the tellurium deposition temperature and the deposition time. The Ge and Te in the films deposited on a confined structure of 500 nm in diameter and 200 nm in depth shows a homogeneous distribution, and their distribution was consistent with the films deposited on a planar structure.
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