Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena · 2006 · 39 citations · 8 references
Natural SciencesMaterials EngineeringMaterials ScienceElectronic MaterialsSemiconductor MaterialsThin FilmsElectrode MaterialsElectrolyte MaterialsSemiconductor Device MaterialsSemiconductor PhysicsSemiconductor Thin FilmsThin Film Electrical PropertiesChalcogenide Thin FilmsMemory MaterialsNonvolatile Memory MaterialsThin-film Solid ElectrolytesTransition Metal Dichalcogenides
Programmable metallization cell structure with a device diameter of 2μm composed of Ag–Ge–Te chalcogenide films was prepared by a cosputtering technique at room temperature. The device with a 150nm thick Ag30(Ge0.3Te0.7)70 electrolyte switches at 0.2V from an “off” state resistance Roff close to 106Ω to an “on” resistance state Ron more than four orders of magnitude lower for this programming current. The switching characteristics were closely related with a diffusion of silver anode into silver-saturated GeTe electrolyte films.
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Nanoscale phase separation in Ag–Ge–Se glasses
Michael N. Kozicki, M. Mitkova, Jesse Zhu et al. · Microelectronic Engineering · 2002 · 69 citations
Natural Sciences, Materials Engineering, Materials Science +12
Thermal and photodiffusion of Ag in S-rich Ge–S amorphous films
M. Mitkova, M.N. Kozicki, H.C. Kim et al. · Thin Solid Films · 2003 · 58 citations