Sang-Ouk Ryu - Concepedia

Author

Sang-Ouk Ryu

Electronics and Telecommunications Research Institute

Also Known As

Sang-Ouk Ryu, Sangouk Ryu, Young-Sam Park

Publications

674

Citations

H-Index

Concepts

All Affiliations

Electronics and Telecommunications Research Institute Dong-Eui University Dankook University Chungnam National University Seoul National University

About

Sang-Ouk Ryu is an author at Electronics and Telecommunications Research Institute specializing in engineering, applied physics, and materials science.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	12	13	571
2	Applied Physics	11	11	435
3	Electrical Engineering	9	9	354
4	Chemistry	1	1	40
5	Computer Engineering	1	1	110

Sang-Ouk Ryu

Publications

633

Citations

H-Index

Page 1

	Year	Citations
Thermomechanical properties and mechanical stresses of Ge2Sb2Te5 films in phase-change random access memory Il-Mok Park, Jung‐Kyu Jung, Sang-Ouk Ryu, Thin Solid Films Materials ScienceMaterials EngineeringThermomechanical PropertiesEngineeringPhysics	2008	118
Sb-Se-based phase-change memory device with lower power and higher speed operations Sung‐Min Yoon, Nam-Yeal Lee, Sang-Ouk Ryu, IEEE Electron Device Letters Non-volatile MemoryElectrical EngineeringHigher Speed OperationsEngineeringLower Power	2006	110
0.34 <inline-formula> <tex-math notation="LaTeX">$\text{V}_{\mathrm {T}}$ </tex-math> </inline-formula> AlGaN/GaN-on-Si Large Schottky Barrier Diode With Recessed Dual Anode Metal Hyunsoo Lee, Dong Yun Jung, Young‐Rak Park, IEEE Electron Device Letters	2015	52
Polycrystalline silicon-germanium heating layer for phase-change memory applications Seung-Yun Lee, Kyu-Jeong Choi, Sang-Ouk Ryu, Applied Physics Letters EngineeringPhase-change Memory ApplicationsSige AlloySilicon On InsulatorPhase Change Memory	2006	51
SrTa<sub>2</sub>O<sub>6</sub> Thin Films Deposited by Plasma-Enhanced Atomic Layer Deposition Won-Jae Lee, In‐Kyu You, Sang-Ouk Ryu, Japanese Journal of Applied Physics EngineeringThin Film Process TechnologyChemical DepositionO 6Semiconductors	2001	46
The effect of antimony-doping on Ge2Sb2Te5, a phase change material Kyu-Jeong Choi, Sung‐Min Yoon, Nam-Yeal Lee, Thin Solid Films Materials ScienceMaterials EngineeringIi-vi SemiconductorTransition Metal ChalcogenidesEngineering	2008	42
Triplet host engineering for triplet exciton management in phosphorescent organic light-emitting diodes Sung Hyun Kim, Jyongsik Jang, Kyoung Soo Yook, Journal of Applied Physics EngineeringOrganic ElectronicsOptoelectronic DevicesChemistryElectronic Devices	2008	40
Characterization of silver-saturated Ge–Te chalcogenide thin films for nonvolatile random access memory Cheol‐Jung Kim, Soon‐Gil Yoon, Kyu-Jeong Choi, Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena Non-volatile MemoryEngineeringElectrode-electrolyte InterfaceEmerging Memory TechnologyThin Film Process Technology	2006	38
Etching Characteristics of Ge<sub>2</sub>Sb<sub>2</sub>Te<sub>5</sub> Using High-Density Helicon Plasma for the Nonvolatile Phase-Change Memory Applications Sung‐Min Yoon, Nam-Yeal Lee, Sang-Ouk Ryu, Japanese Journal of Applied Physics Non-volatile MemoryEngineeringEmerging Memory TechnologyPhase Change MemoryNanoelectronics	2005	34
New High-k SrTa2O6 Gate Dielectrics Prepared by Plasma-Enhanced Atomic Layer Chemical Vapor Deposition Byung Gyu Chae, Won-Jae Lee, In‐Kyu You, Japanese Journal of Applied Physics Materials ScienceMaterials EngineeringElectrical EngineeringOxide HeterostructuresSemiconductors	2002	28

Page 1