0.34 <inline-formula> <tex-math notation="LaTeX">$\text{V}_{\mathrm {T}}$ </tex-math> </inline-formula> AlGaN/GaN-on-Si Large Schottky Barrier Diode With Recessed Dual Anode Metal

Abstract

A large GaN-Schottky barrier diode (SBD) with a recessed dual anode metal is proposed to achieve improved the forward characteristics without a degradation of the reverse performances. Using optimized dry etch condition for a large device, the electrical characteristics of the device are demonstrated when applying the recessed dual anode metal and changing the recess depths. The device size and channel width are 4 mm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> and 63 mm, respectively. The 16-nm recessed dual anode metal SBD has a turn- <bold xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">on</b> voltage of 0.34 V, a breakdown voltage of 802 V, and a reverse leakage current of <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$1.82~\mu \text{A}$ </tex-math></inline-formula> /mm at −15 V. The packaged SBD exhibits a forward current of 6.2 A at 2 V and a reverse recovery charge of 11.54 nC.