Byoung‐Gon Yu

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Publications

Citations

1.7K

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Active since

1990

Affiliations

Electronics and Telecommunications Research Institute(Current)

Chungnam National University

Dong-Eui University

Korea Advanced Institute of Science and Technology

Soongsil University

Byoung‐Gon Yu is an author at Electronics and Telecommunications Research Institute specializing in materials science, materials engineering, and electronic materials.

ORCID

Publications per year

1990–2018

Publications

A Low Power Phase-Change Random Access Memory using a Data-Comparison Write Scheme

Byung‐Do Yang, Jae-Eun Lee, Jang-Su Kim et al. · 2007 · 270 citations

Engineering, Computer Engineering, Electrical Engineering +16

Thermomechanical properties and mechanical stresses of Ge2Sb2Te5 films in phase-change random access memory

Il-Mok Park, Jung‐Kyu Jung, Sang-Ouk Ryu et al. · Thin Solid Films · 2008 · 120 citations

Natural Sciences, Materials Engineering, Materials Science +16

Sb-Se-based phase-change memory device with lower power and higher speed operations

Sung‐Min Yoon, Nam-Yeal Lee, Sang-Ouk Ryu et al. · IEEE Electron Device Letters · 2006 · 110 citations

Engineering, Electrical Engineering, Materials Science +13

Dielectric and ferroelectric response as a function of annealing temperature and film thickness of sol-gel deposited Pb(Zr0.52Ti0.48)O3 thin film

Chae‐Ryong Cho, Won–Jae Lee, Byoung‐Gon Yu et al. · Journal of Applied Physics · 1999 · 97 citations

Natural Sciences, Materials Engineering, Materials Science +17

Nanoscale observations of the operational failure for phase-change-type nonvolatile memory devices using Ge2Sb2Te5 chalcogenide thin films

Sung‐Min Yoon, Kyu-Jeong Choi, Nam-Yeal Lee et al. · Applied Surface Science · 2007 · 56 citations

Engineering, Materials Engineering, Materials Science +17

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