Correlation between Fermi Level Stabilization Positions and Maximum Free Carrier Concentrations in III–V Compound Semiconductors

Abstract

Maximum carrier concentrations reported in the literature are compared with the respective Fermi level stabilization positions for various semiconductors. It is shown that heavy n -type ( p -type) doping is obtainable for a semiconductor whose Fermi level stabilization position is located near the conduction (valence) band edge.