Study of Ti/Au, Ti/Al/Au, and Ti/Al/Ni/Au ohmic contacts to n -GaN

InGaN-Based Multi-Quantum-Well-Structure Laser Diodes

Shuji Nakamura, Masayuki Senoh, Shin‐ichi Nagahama et al. · Japanese Journal of Applied Physics · 1996 · 2.5K citations

Engineering, Materials Engineering, Materials Science +17

Very low resistance multilayer Ohmic contact to <i>n</i>-GaN

Zhifang Fan, S. Noor Mohammad, Wook Kim et al. · Applied Physics Letters · 1996 · 455 citations

Engineering, Materials Engineering, Materials Science +17

Low resistance ohmic contacts on wide band-gap GaN

Mao Lin, Zhenqiang Ma, Fengyi Huang et al. · Applied Physics Letters · 1994 · 438 citations

Engineering, Materials Engineering, Materials Science +17

Metal contacts to gallium nitride

James Foresi, T. D. Moustakas · Applied Physics Letters · 1993 · 330 citations

Engineering, Electrical Engineering, Materials Science +17

Investigation of the mechanism for Ohmic contact formation in Al and Ti/Al contacts to <b> <i>n</i> </b>-type GaN

B. P. Luther, Suzanne E. Mohney, Thomas N. Jackson et al. · Applied Physics Letters · 1997 · 260 citations

Engineering, Materials Engineering, Materials Science +17