G.Y. Zhang

Negative capacitance in light-emitting devices

Chaoyi Zhu, Liefeng Feng, C.D. Wang et al. · Solid-State Electronics · 2009 · 105 citations

Photonics, Electrical Engineering, Solid-state Lighting +6

Accurate electrical characterization of forward AC behavior of real semiconductor diode: Giant negative capacitance and nonlinear interfacial layer

C.D. Wang, Chaoyi Zhu, G.Y. Zhang et al. · IEEE Transactions on Electron Devices · 2003 · 62 citations

Engineering, Junction Voltage, Semiconductor Device +16

Study of Ti/Au, Ti/Al/Au, and Ti/Al/Ni/Au ohmic contacts to n -GaN

Z. X. Qin, Z.Z. Chen, X.M. Ding et al. · Applied Physics A · 2004 · 50 citations

Materials Engineering, Wide-bandgap Semiconductor, Electrical Engineering +8

High temperature dependence of the density of two-dimensional electron gas in Al0.18Ga0.82N/GaN heterostructures

M.J. Wang, Bo Shen, Fujun Xu et al. · Applied Physics A · 2007 · 42 citations

Two-dimensional Electron Gas, Wide-bandgap Semiconductor, Engineering +7

Reduction of threading edge dislocation density in n-type GaN by Si delta-doping

Z. Yang, Z.T. Chen, Yuan Lü et al. · Journal of Crystal Growth · 2005 · 27 citations

Wide-bandgap Semiconductor, Electrical Engineering, Engineering +5