Reduction of threading edge dislocation density in n-type GaN by Si delta-doping - Concepedia

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Reduction of threading edge dislocation density in n-type GaN by Si delta-doping

27

Citations

12

References

2005

Year

Z. Yang, Z.T. Chen, Yuan Lü, Tongjun Yu, Xiao Hu, Kun Xu, G.Y. Zhang

Journal of Crystal Growth

Wide-bandgap SemiconductorElectrical EngineeringEngineeringApplied PhysicsSi Delta-dopingGan Power DeviceN-type GanEdge Dislocation Density

References

	Year	Citations

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