Applied Physics Letters · 2006 · 41 citations · 12 references
EngineeringMaterials EngineeringMaterials ScienceOptoelectronicsSemiconductor DevicesSemiconductor MaterialsLaser DiodesOptical Properties Of SemiconductorsOptoelectronic DevicesQuantum WellsSemiconductor LasersSemiconductor PhysicsBlue Laser DiodesCarrier ConfinementCarrier Transport MechanismsCharge Carrier DensityHigh-temperature Device OperationOptical GainOptical Gain MaterialsPower Output
We report stable temperature characteristics of threshold current and output power in InGaN blue laser diodes emitting around 450nm. The threshold current is changed by <3mA in operation temperature range from 20to80°C, and even negative characteristic temperature is observed in a certain temperature range. This peculiar temperature characteristic is attributed to originate from unique carrier transport properties of InGaN quantum wells with high In composition, which is deduced from the simulation of carrier density and optical gain. In addition, slope efficiency is also maintained well and wall plug efficiency is even improved as temperature increases.
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Characteristics of GaN-based laser diodes for post-DVD applications
O. H. Nam, K. H. Ha, Joon Seop Kwak et al. · physica status solidi (a) · 2004 · 91 citations