Characteristics of GaN-based laser diodes for post-DVD applications

Abstract

We investigated characteristics of high performance GaN-based laser diodes grown on LEO-GaN/sapphire and free-standing GaN substrates. The maximum output power was 300 mW under cw operation. The operation current and voltage were 53 mA and 4.67 V, respectively, for 30 mW-output power. Thermal simulation and junction temperature measurement of laser diodes showed that epi-down bonding was essential for the use of sapphire substrate. It was proposed that Mg diffusion into active layers was responsible for the degradation mechanism of GaN-based laser diodes. (© 2004 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)