H. S. Paek - Concepedia

Author

H. S. Paek

Samsung (South Korea)

Also Known As

H Paek, H. Paek, H. S. Paek, H.S. Paek

Publications

808

Citations

H-Index

Concepts

All Affiliations

Samsung (South Korea)Tech University of Korea Chungbuk National University Inha University Seoul National University

About

H. S. Paek is an author at Samsung (South Korea) specializing in optoelectronics, applied physics, and engineering.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	17	24	752
2	Applied Physics	17	24	752
3	Electrical Engineering	14	18	589
4	Materials Science	3	3	67
5	Materials Engineering	2	2	50

H. S. Paek

Publications

752

Citations

H-Index

Page 1

	Year	Citations
Characteristics of GaN-based laser diodes for post-DVD applications O. H. Nam, K. H. Ha, Joon Seop Kwak, physica status solidi (a) Gan-based Laser DiodesWide-bandgap SemiconductorElectrical EngineeringEngineeringLaser Diodes	2004	91
High-power GaN-based blue-violet laser diodes with AlGaN∕GaN multiquantum barriers Sung‐Nam Lee, S. Y. Cho, Han‐Youl Ryu, Applied Physics Letters SemiconductorsPhotonicsElectrical EngineeringAlgan∕gan Multiquantum BarriersEngineering	2006	79
Characteristics of long wavelength InGaN quantum well laser diodes K. S. Kim, J. K. Son, S. N. Lee, Applied Physics Letters PhotonicsSolid-state LightingEngineeringPhotoluminescencePhysics	2008	53
Monolithic InGaN-based white light-emitting diodes with blue, green, and amber emissions Sung‐Nam Lee, H. S. Paek, Hyonchol Kim, Applied Physics Letters White OledPhotonicsElectrical EngineeringIn-phase SeparationEngineering	2008	51
High-Performance Blue InGaN Laser Diodes With Single-Quantum-Well Active Layers Han‐Youl Ryu, Okhyun Nam, Y. J. Park, IEEE Photonics Technology Letters PhotonicsElectrical EngineeringSingle-quantum-well Active LayersEngineeringSolid-state Lighting	2007	49
Effects of Mg dopant on the degradation of InGaN multiple quantum wells in AlInGaN-based light emitting devices Sung‐Nam Lee, H. S. Paek, J. K. Son, Journal of Electroceramics Electrical EngineeringSolid-state LightingEngineeringMg DopantApplied Physics	2008	46
Highly stable temperature characteristics of InGaN blue laser diodes Han‐Youl Ryu, K. H. Ha, S. N. Lee, Applied Physics Letters Semiconductor TechnologyPhotonicsElectrical EngineeringSolid-state LightingEngineering	2006	40
Characteristics of Si and Mg doping in a-plane GaN grown on r-plane sapphire Sung‐Nam Lee, H. S. Paek, J. K. Son, Journal of Crystal Growth Materials ScienceMaterials EngineeringElectrical EngineeringWide-bandgap SemiconductorEngineering	2007	39
Determination of internal parameters in blue InGaN laser diodes by the measurement of cavity-length dependent characteristics Han‐Youl Ryu, K. H. Ha, J. K. Son, Applied Physics Letters PhotonicsSolid-state LightingEngineeringLaser ScienceViolet Lds	2008	36
Enhanced optical properties of InGaN MQWs with InGaN underlying layers Jihyeon Son, SN Lee, T. Sakong, Journal of Crystal Growth PhotonicsOptical MaterialsEngineeringPhysicsOptical Properties	2005	30

Page 1