IEEE Photonics Technology Letters · 2007 · 49 citations · 9 references
EngineeringElectrical EngineeringMaterials ScienceOptoelectronicsPhotonicsSemiconductor DevicesLaser DiodesOptical Properties Of SemiconductorsOptoelectronic DevicesQuantum WellsSemiconductor LasersSemiconductor PhysicsBlue Laser DiodesCatastrophic Optical DamageHigh-power Laser DiodesPower OutputQuantum Well Laser DiodesQuantum Well StructuresSemiconductor Laser DiodesTemperature Dependence
The authors report on the high-performance blue laser diodes (LDs) with an emission wavelength of ~448 nm employing InGaN single-quantum-well (QW) active layers. At 100-mW continuous-wave (CW) output power, operation current and voltage are, respectively, 150 mA and 5.3 V, corresponding to the wall plug efficiency of >12%, a record value for the single-mode InGaN LDs with blue wavelengths. The single QW blue LD showed normal temperature dependence of light output-current curves with the characteristic temperature of 170 K. In addition, we demonstrate a high level of catastrophic optical damage of >300 mW and long device lifetime under CW operation condition at room temperature.
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