Seung‐Hoon Chae

Novel gate-recessed vertical InAs/GaSb TFETs with record high I<inf>ON</inf> of 180 μA/μm at V<inf>DS</inf> = 0.5 V

Guangle Zhou, R. Li, T. Vasen et al. · 2012 · 115 citations

Semiconductor Technology, Wide-bandgap Semiconductor, Electrical Engineering +12

Characteristics of GaN-based laser diodes for post-DVD applications

O. H. Nam, K. H. Ha, Joon Seop Kwak et al. · physica status solidi (a) · 2004 · 91 citations

Gan-based Laser Diodes, Wide-bandgap Semiconductor, Electrical Engineering +8

Crystal-polarity dependence of Ti/Al contacts to freestanding n-GaN substrate

Joon Seop Kwak, K. Y. Lee, Jeong-Yeol Han et al. · Applied Physics Letters · 2001 · 84 citations

Materials Science, Wide-bandgap Semiconductor, Electrical Engineering +8

Fabrication and characterization of pre-aligned gallium nitride nanowire field-effect transistors

Ho‐Young Cha, Huaqiang Wu, M. V. S. Chandrashekhar et al. · Nanotechnology · 2006 · 63 citations

Semiconductor Technology, Electrical Engineering, Semiconductor Device +12

Characteristic of InGaN/GaN Laser Diode Grown by a Multi-Wafer MOCVD System

Y. Park, B. J. Kim, Jeong‐Whan Lee et al. · MRS Internet Journal of Nitride Semiconductor Research · 1999 · 47 citations · Full text