Jeong-Yeol Han

Design and early performance of IGRINS (Immersion Grating Infrared Spectrometer)

Chan Park, D. T. Jaffe, In-Soo Yuk et al. · Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE · 2014 · 175 citations

Ga vacancies as dominant intrinsic acceptors in GaN grown by hydride vapor phase epitaxy

J. Oila, Jani Kivioja, V. Ranki et al. · Applied Physics Letters · 2003 · 125 citations

Wide-bandgap Semiconductor, Electrical Engineering, Engineering +13

Donor-related recombination processes in hydride-vapor-phase epitaxial GaN

J. A. Freitas, W. J. Moore, B. V. Shanabrook et al. · Physical review. B, Condensed matter · 2002 · 96 citations

Photoluminescence, Engineering, Physics +15

Crystal-polarity dependence of Ti/Al contacts to freestanding n-GaN substrate

Joon Seop Kwak, K. Y. Lee, Jeong-Yeol Han et al. · Applied Physics Letters · 2001 · 84 citations

Materials Science, Wide-bandgap Semiconductor, Electrical Engineering +8

Measurement of second order susceptibilities of GaN and AlGaN

Norman A. Sanford, Albert V. Davydov, D. Tsvetkov et al. · Journal of Applied Physics · 2005 · 70 citations

Materials Science, Optical Materials, Engineering +14