Electron Hall mobility in GaAsBi

Abstract

We present measurements of the electron Hall mobility in n-type GaAs1−xBix epilayers. We observed no significant degradation in the electron mobility with Bi incorporation in GaAs, up to a concentration of 1.2%. At higher Bi concentration (≥1.6%) some degradation of the electron mobility was observed, although there is no apparent trend. Temperature dependent Hall measurements of the electron mobility suggest neutral impurity scattering to be the dominant scattering mechanism.