Concepedia

InGaAsP/InGaP superlattices by conventional MBE with molten metal solution phosphorus source

B. R. Semyagin, Yu. B. Bolkhovityanov, A. M. Gilinsky, A.K Gutakousky, M. A. Revenko, O. P. Pchelyakov, D. F. Feklin

Journal of Crystal Growth · 2002 · 12 citations · 8 references

DOI

Concepts

References

8

Electronic properties of InGaP grown by solid-source molecular-beam epitaxy with a GaP decomposition source

T. Shitara, K. Eberl · Applied Physics Letters · 1994 · 109 citations

, , +17

Reproducibility studies of lattice matched GaInAsP on (100) InP grown by molecular beam epitaxy using solid phosphorus

James N. Baillargeon, A. Y. Cho, R. Fischer et al. · Applied Physics Letters · 1994 · 48 citations

, , +17

Structural and optical investigation of InAsxP1−x/InP strained superlattices

Carlo Lamberti, Silvia Bordiga, F. Boscherini et al. · Journal of Applied Physics · 1998 · 40 citations

, , +17

Experimental determination of the incorporation factor of As4 during molecular beam epitaxy of GaAs

O. P. Pchelyakov, B. R. Semyagin · Journal of Crystal Growth · 1999 · 39 citations

, , +13

Evaluation of the performance and operating characteristics of a solid phosphorus source valved cracking cell for molecular beam epitaxy growth of III–V compounds

James N. Baillargeon, A. Y. Cho, R. Fischer · Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena · 1995 · 34 citations

, , +9