2010 IEEE MTT-S International Microwave Symposium · 2010 · 25 citations · 5 references
EngineeringElectrical EngineeringMicroelectronicsMicrofabricationMicrowave EngineeringMems CharacterizationMems FabricationMicromachiningMicrowave Integrated CircuitsMicrowave MeasurementsRf MemsContact ResistanceElectromagnetic DesignFabricationInsertion LossInsertion Loss MeasurementMicro ProbesOn-wafer MeasurementSilicon
A micromachined on-wafer probe is designed, fabricated and measured at W-Band as a proof of concept for probes operating at sub-millimeter wavelengths. A fabrication process is developed to create devices that combine a waveguide probe with a GSG probe tip on a 15 μm silicon substrate. This device is housed in a metal machined waveguide block that provides mechanical support for the probe and connection to a waveguide flange. Load-cell measurements show a DC contact resistance below 0.07 Ω with a force of 1 mN. A two-tier TRL calibration characterizes the operation of the electromagnetic design and an insertion loss of 1.75 dB is achieved; this is comparable with commercial probes operating in the same band.
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Sub 50 nm InP HEMT Device with Fmax Greater than 1 THz
J. Kooi, Goutam Chattopadhyay, S. Withington et al. · International Journal of Infrared and Millimeter Waves · 2003 · 74 citations