Luminescence decay in highly excited GaN grown by hydride vapor-phase epitaxy

Abstract

Carrier recombination dynamics in GaN grown by hydride vapor-phase epitaxy has been studied by means of transient photoluminescence under high photoexcitation conditions that are close to stimulated emission regime. The luminescence transient featured an exponential decay with the time constant of 205 ps at room temperature. The transient was shown to be in good agreement with a model of saturated centers of nonradiative recombination with the trap density of ∼1017 cm−3 and carrier recombination coefficients of ∼10−8 cm3/s. In such a regime, the lifetimes of electrons and holes have a common value of 410 ps.