Applied Physics Letters · 1971 · 75 citations · 8 references
EngineeringElectrical EngineeringMaterials ScienceOptoelectronicsPhotonicsSemiconductor MaterialsOptical Properties Of SemiconductorsSemiconductor Device MaterialsSemiconductor HeterostructuresSemiconductor LasersSemiconductor PhysicsThermal Properties Of SemiconductorsDouble Heterostructure DevicesDouble HeterostructuresHeterostructure DevicesHeterostructure LasersLasersSpectral CharacteristicsThermal Management In Semiconductor LasersThermal Properties
Double heterostructure GaAs junction lasers have been operated continuously at temperatures up to 355°K by use of the advantageous thermal properties of the stripe-geometry configuration. Spatial and spectral characteristics of the modes of these lasers are reported. For the direction perpendicular to the junction plane, these observations show that the field distributions are more symmetrical, the focusing is stronger, and operation in high-order modes is more easily achieved than in homostructure (diffused) junction lasers. For the direction along the junction plane, no significant differences are found between double heterostructure and homostructure lasers.
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JUNCTION LASERS WHICH OPERATE CONTINUOUSLY AT ROOM TEMPERATURE
I. Hayashi, M. B. Panish, P. W. Foy et al. · Applied Physics Letters · 1970 · 591 citations
HERMITE-GAUSSIAN MODE PATTERNS IN GaAs JUNCTION LASERS
J. C. Dyment · Applied Physics Letters · 1967 · 182 citations
Resonant modes of GaAs junction lasers
T. Zachos, J. Ripper · IEEE Journal of Quantum Electronics · 1969 · 107 citations