Device properties of homoepitaxially grown diamond

High-temperature point-contact transistors and Schottky diodes formed on synthetic boron-doped diamond

M. W. Geis, D.D. Rathman, D. J. Ehrlich et al. · IEEE Electron Device Letters · 1987 · 218 citations

Engineering, Electrical Engineering, Materials Science +17

Characterization of conducting diamond films

Naoji Fujimori, T. Imai, Akihiro Doi · Vacuum · 1986 · 200 citations

Natural Sciences, Materials Engineering, Materials Science +11

Field-Effect Transistors using Boron-Doped Diamond Epitaxial Films

Hiromu Shiomi, Yoshiki Nishibayashi, Naoji Fujimori · Japanese Journal of Applied Physics · 1989 · 123 citations

Engineering, Electrical Engineering, Electronic Materials +5

Characterization of Boron-Doped Diamond Film

Ken Okano, Hidetoshi Naruki, Yukio Akiba et al. · Japanese Journal of Applied Physics · 1989 · 102 citations · Full text

Natural Sciences, Materials Science, Physics +11

Summary Abstract: Device applications of diamonds

M. W. Geis, N. N. Efremow, D.D. Rathman · Journal of Vacuum Science & Technology A Vacuum Surfaces and Films · 1988 · 89 citations

Engineering, Materials Engineering, Materials Science +6