Transport properties of reactive-ion-etching-induced p-to-n type converted layers in HgCdTe - Concepedia

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Transport properties of reactive-ion-etching-induced p-to-n type converted layers in HgCdTe

22

Citations

4

References

2002

Year

T.T. Nguyen, J. Antoszewski, C.A. Musca, D.A. Redfern, J.M. Dell, L. Faraone

Journal of Electronic Materials

Electrical EngineeringEngineeringNanoelectronicsTransport PropertiesApplied PhysicsSurface SciencePlasma EtchingMicroelectronicsCharge Carrier TransportCategoryiii-v Semiconductor

References

	Year	Citations

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