Ion implanted junction formation in Hg1−<i>x</i>Cd<i>x</i>Te

Abstract

This work reports on two significantly different methods to form junctions in Hg1−xCdxTe by ion implantation: a ‘‘displaced Hg diffusion source’’ for n-on-p junctions and an ‘‘implanted species diffusion source’’ for p-on-n devices. For each one, the role of background impurities, stoichiometric defects, and implanted species of junction formation have been determined. In spite of superficial damage created by the implant, these methods produced implanted junctions of either type with low damage in the near-junction region, resulting in excellent electrical characteristics.