Indium surface segregation in AlSb and GaSb

Surface segregation of In atoms during molecular beam epitaxy and its influence on the energy levels in InGaAs/GaAs quantum wells

Koji Muraki, S. Fukatsu, Y. Shiraki et al. · Applied Physics Letters · 1992 · 483 citations

Engineering, Materials Engineering, Materials Science +17

Effects of interface layer sequencing on the transport properties of InAs/AlSb quantum wells: Evidence for antisite donors at the InAs/AlSb interface

G. Tuttle, H. Kroemer, John H. English · Journal of Applied Physics · 1990 · 282 citations

Engineering, Materials Science, Physics +17

Composition and lattice-mismatch measurement of thin semiconductor layers by x-ray diffraction

Paul F. Fewster, C. J. Curling · Journal of Applied Physics · 1987 · 206 citations

Natural Sciences, Materials Engineering, Materials Science +14

Kinetic model of element III segregation during molecular beam epitaxy of III-III′-V semiconductor compounds

Olivier Dehaese, X. Wallart, F. Mollot · Applied Physics Letters · 1995 · 168 citations

Engineering, Materials Engineering, Materials Science +17

Indium surface segregation in strained GaInAs quantum wells grown on GaAs by MBE

J. Nagle, Jean-Pierre Landesman, M. Larive et al. · Journal of Crystal Growth · 1993 · 105 citations

Engineering, Materials Engineering, Materials Science +14