Indium surface segregation in strained GaInAs quantum wells grown on GaAs by MBE

Surface segregation of third-column atoms in group III-V arsenide compounds: Ternary alloys and heterostructures

J. M. Moison, C. Guille, F. Houzay et al. · Physical review. B, Condensed matter · 1989 · 418 citations

Natural Sciences, Materials Science, Physics +17

Monolayer-scale optical investigation of segregation effects in semiconductor heterostructures

Jean‐Michel Gérard, Jean-Yves Marzin · Physical review. B, Condensed matter · 1992 · 103 citations

Engineering, Materials Science, Physics +17

Experimental evidence of difference in surface and bulk compositions of AlxGa1-xAs, AlxIn1-x As and GaxIn1-x As epitaxial layers grown by molecular beam epitaxy

J. Massies, F. Turco, A. Salètes et al. · Journal of Crystal Growth · 1987 · 100 citations

Natural Sciences, Materials Engineering, Materials Science +12

Formation and morphology of InAs/GaAs heterointerfaces

O. Brandt, K. Ploog, L. Tapfer et al. · Physical review. B, Condensed matter · 1992 · 62 citations

Engineering, Materials Engineering, Materials Science +17

Intermixing at InAs/GaAs and GaAs/InAs interfaces

C. Guille, F. Houzay, J. M. Moison et al. · Surface Science · 1987 · 59 citations

Engineering, Electrical Engineering, Materials Science +10