The control and modeling of doping profiles and transients in MOVPE growth

Properties of high-purity Al<i>x</i>Ga1−<i>x</i>As grown by the metalorganic vapor-phase-epitaxy technique using methyl precursors

T. F. Kuech, D. J. Wolford, E. Veuhoff et al. · Journal of Applied Physics · 1987 · 153 citations

Natural Sciences, Materials Engineering, Materials Science +16

Introduction to diffusion in semiconductors

B. Tuck · European Solid-State Circuits Conference · 1975 · 151 citations

Natural Sciences, Materials Science, Physics +10

Introduction to Diffusion in Semiconductors

P.C. Newman · Electronics and Power · 1975 · 83 citations

Natural Sciences, Materials Science, Physics +10

The growth of Magnesium-doped GaAs by the Om-Vpe process

C. R. Lewis, W. T. Dietze, M. J. Ludowise · Journal of Electronic Materials · 1983 · 82 citations

Engineering, Electrical Engineering, Materials Science +13

Factors influencing doping control and abrupt metallurgical transitions during atmospheric pressure MOVPE growth of AlGaAs and GaAs

J.S. Roberts, N. J. Mason, M. Robinson · Journal of Crystal Growth · 1984 · 79 citations

Engineering, Materials Engineering, Materials Science +14