C. R. Lewis

Continuous 300-K laser operation of strained superlattices

M. J. Ludowise, W. T. Dietze, C. R. Lewis et al. · Applied Physics Letters · 1983 · 85 citations

Engineering, Laser Applications, Laser Material +16

The growth of Magnesium-doped GaAs by the Om-Vpe process

C. R. Lewis, W. T. Dietze, M. J. Ludowise · Journal of Electronic Materials · 1983 · 82 citations

Materials Engineering, Electrical Engineering, Engineering +6

Stimulated emission in strained-layer quantum-well heterostructures

M. D. Camras, Judith M. Brown, N. Holonyak et al. · Journal of Applied Physics · 1983 · 69 citations

Engineering, Laser Applications, Optoelectronic Devices +16

Impurity induced disordering of strained GaP-GaAs1−<i>x</i>P<i>x</i>(<i>x</i>∼0.6) superlattices

M. D. Camras, N. Holonyak, K. Hess et al. · Applied Physics Letters · 1983 · 58 citations

Semiconductors, Materials Science, Engineering +11

21% (one sun, air mass zero) 4 cm2 GaAs space solar cells

J. G. Werthen, G. F. Virshup, C. W. Ford et al. · Applied Physics Letters · 1986 · 38 citations

Wide-bandgap Semiconductor, Engineering, Conversion Efficiency +18