RDS, LEED and STM of the P-rich and Ga-rich surfaces of GaP(100)

Characterization of epitaxial semiconductor growth by reflectance anisotropy spectroscopy and ellipsometry

J.‐T. Zettler · Progress in Crystal Growth and Characterization of Materials · 1997 · 122 citations

Natural Sciences, Materials Engineering, Materials Science +14

Temperature dependence of the dielectric function and the interband critical-point parameters of GaP

Stefan Zollner, M. Garriga, J. Kircher et al. · Physical review. B, Condensed matter · 1993 · 77 citations

Natural Sciences, Materials Science, Condensed Matter Physics +14

Geometry and electronic structure of InP(001)(2×4) reconstructions

W. G. Schmidt, F. Bechstedt · Surface Science · 1998 · 69 citations

Natural Sciences, Chemistry, Materials Science +12

Atomic surface structure of the phosphorous-terminated InP(001) grown by MOVPE

Patrick Vogt, T. Hannappel, S. Visbeck et al. · Physical review. B, Condensed matter · 1999 · 56 citations

Natural Sciences, Materials Engineering, Materials Science +16

Determination of InP(001) surface reconstructions by STM and infrared spectroscopy of adsorbed hydrogen

L. Li, Qiang Fu, C. H. Li et al. · Physical review. B, Condensed matter · 2000 · 41 citations

Natural Sciences, Chemistry, Materials Science +13