Applied Physics Letters · 1985 · 10 citations · 9 references
EngineeringElectrical EngineeringMaterials ScienceElectronic MaterialsMicroelectronicsSemiconductor DevicesInterface EngineeringMetal-oxide-semiconductor Field-effect TransistorsMetal-semiconductor ContactsMos CapacitorsRadiation Damage In MaterialsSemiconductor InterfacesGate Oxide InterfacesGate Oxide LeakageInterface Trap DensityInterface Trap Density MeasurementInterface TrapsInterfacial Stress DistributionRadiation EffectsRadiation-tolerant Semiconductor Devices
The radiation-induced interface trap density in an Al/SiO2/Si capacitor has been found to exhibit a systematic lateral variation under the gate area as one probes from the edge toward the center of the device. This spatial variation correlates well with the lateral distribution of the gate Al induced interfacial stresses, and the results provide further support to one earlier conclusion that the metal-oxide-Si device radiation sensitivity depends strongly on its interfacial stress distribution.
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