Enhancement of the dielectric constant of Ta2O5through substitution with TiO2

UV-O/sub 3/ and dry-O/sub 2/: Two-step-annealed chemical vapor-deposited Ta/sub 2/O/sub 5/ films for storage dielectrics of 64-Mb DRAMs

H. Shinriki, Masami Nakata · IEEE Transactions on Electron Devices · 1991 · 205 citations

Natural Sciences, Materials Engineering, Materials Science +17

Dielectric response of ferroelectric thin films on non-metallic electrodes

M. Sayer, Abhai Mansingh, Aman Arora et al. · Integrated ferroelectrics · 1992 · 95 citations

Natural Sciences, Electrical Engineering, Materials Science +17

Effects of additive elements on electrical properties of tantalum oxide films

Hisayoshi Fujikawa, Yasunori Taga · Journal of Applied Physics · 1994 · 79 citations · Full text

Natural Sciences, Materials Engineering, Materials Science +17

Thermal stability of long range order in oxides

R.S. Roth · Progress in Solid State Chemistry · 1980 · 59 citations

Natural Sciences, Materials Science, Physics +14

A newly designed planar stacked capacitor cell with high dielectric constant film for 256 Mbit DRAM

T. Eimori, Yutaka Ohno, Hiroshi Kimura et al. · 2002 · 21 citations

Engineering, Electrical Engineering, Materials Science +17