Effects of additive elements on electrical properties of tantalum oxide films

Abstract

Ta2O5-based composite films prepared by magnetron sputtering have been investigated with respect to their dielectric properties. As additive third oxides, Y2O3 and WO3 were found to be effective materials for improving insulating properties. In these composite films, the dielectric constant remained unchanged. The maximum storage charge of the composite films was twice that of Ta2O5 films. The main reason for improving the insulating properties could be explained by the charge compensation of excess oxygen by these additive oxides.