Gap States Distribution of Undoped a-Si: H Determined with Phase-Shift Analysis of the Modulated Photocurrent

Hidetoshi Oheda, Satoshi Yamasaki, Toshihiko Yoshida, Akihisa Matsuda, Hideyo Okushi, Kazunobu Tanaka

Japanese Journal of Applied Physics · 1982 · 24 citations · 10 references

Concepts

Abstract

In order to determine the energy distribution of localized states in the band gap of undoped hydrogenated amorphous silicon, the previously proposed method, i.e. the phase-shift analysis of the modulated photocurrent, is applied to this material. Obtained is the tail states distribution with a bump structure around 0.62 eV below the mobility edge of the conduction band.

References

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