Ion implantation in indium phosphide

Ion-implanted <i>n</i>- and <i>p</i>-type layers in InP

J.P. Donnelly, C. E. Hurwitz · Applied Physics Letters · 1977 · 91 citations

Engineering, Materials Engineering, Materials Science +13

Beryllium-ion implantation in InP and In1−<i>x</i>Ga<i>x</i>As<i>y</i>P1−<i>y</i>

J.P. Donnelly, Craig Armiento · Applied Physics Letters · 1979 · 41 citations

Engineering, Materials Engineering, Materials Science +8

N-type doping of indium phosphide by implantation

Donna E. Davies, J.P. Lorenzo, T. G. Ryan · Solid-State Electronics · 1978 · 41 citations

Engineering, Materials Engineering, Materials Science +14

Chemical Vapor Deposition of Silicon Nitride: Encapsulant Layers for Annealing Gallium Arsenide

Taroh Inada, Tatsuya Ohkubo, S. Sawada et al. · Journal of The Electrochemical Society · 1978 · 40 citations

Engineering, Materials Engineering, Materials Science +17

Ion-implanted <i>n</i>-channel InP metal semiconductor field-effect transistor

K.R. Gleason, H.B. Dietrich, R. L. Henry et al. · Applied Physics Letters · 1978 · 33 citations

Engineering, Electrical Engineering, Materials Science +17