Taroh Inada

Chemical Vapor Deposition of Silicon Nitride: Encapsulant Layers for Annealing Gallium Arsenide

Taroh Inada, Tatsuya Ohkubo, S. Sawada et al. · Journal of The Electrochemical Society · 1978 · 40 citations

Engineering, Optoelectronic Devices, Chemical Deposition +19

DOPING OF SILICON BY ION IMPLANTATION

Tadatsugu Itoh, Taroh Inada, Kiyoshi Kanekawa · Applied Physics Letters · 1968 · 33 citations

Materials Science, Ion Implantation, Engineering +14

Recrystallization, redistribution, and electrical activation of strained-silicon/Si0.7Ge0.3 heterostructures with implanted arsenic

Nobuyuki Sugii, Shigefumi Irieda, Jun Morioka et al. · Journal of Applied Physics · 2004 · 29 citations

Arsenic Implantation, Engineering, Integrated Circuits +17

Role of hydrogen during rapid vapor-phase doping analyzed by x-ray photoelectron spectroscopy and Fourier-transform infrared-attenuated total reflection

Yukihiro Kiyota, Fumiko Yano, Seiji Suzuki et al. · Journal of Vacuum Science & Technology A Vacuum Surfaces and Films · 1998 · 27 citations

X-ray Spectroscopy, Engineering, Chemistry +18

Nitrogen implantation in (100)-β-SiC layers grown on Si substrate

Yasuaki Hirano, Taroh Inada · Journal of Applied Physics · 1995 · 26 citations

Materials Science, Semiconductors, Materials Engineering +12