T. G. Ryan - Concepedia

Author

T. G. Ryan

University College Cork

Also Known As

T. G. RYAN, T. G. Ryan, T. Ryan, T.G. Ryan, Thomas G. Ryan, Thomas Ryan

Publications

714

Citations

H-Index

Concepts

All Affiliations

University College Cork Hanscom Air Force Base

About

T. G. Ryan is an author at University College Cork specializing in engineering, chemistry, and materials science.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	13	13	662
2	Chemistry	8	8	532
3	Chemical Engineering	7	7	508
4	Applied Physics	4	4	107
5	Medicine	1	1	50

T. G. Ryan

Publications

662

Citations

H-Index

Page 1

	Year	Citations
Study of the SO<sub>2</sub> oxidation in solution and its role in atmospheric chemistry Chr E. Junge, T. G. Ryan Quarterly Journal of the Royal Meteorological Society Advanced Oxidation ProcessChemical EngineeringEnvironmental ChemistryEngineeringAerosol Formation	1958	228
An Investigation of the Anodic Behavior of Copper and Its Anodically Produced Oxides in Aqueous Solutions of High pH L.D. Burke, Michael Ahern, T. G. Ryan Journal of The Electrochemical Society Environmental ElectrochemistryEngineeringHydrous Oxide EquilibriumChemistryMineral Processing	1990	122
The role of incipient hydrous oxides in the oxidation of glucose and some of its derivatives in aqueous media L.D. Burke, T. G. Ryan Electrochimica Acta Chemical EngineeringEngineeringIncipient Hydrous OxidesCatalysisChemistry	1992	50
The Participation of Interfacial Hydrous Oxide Species in Some Anodic Reactions at Copper Electrodes in Base L.D. Burke, T. G. Ryan Journal of The Electrochemical Society Materials ScienceInorganic ChemistryChemical EngineeringCopper Oxide MaterialsEngineering	1990	46
N-type doping of indium phosphide by implantation Donna E. Davies, J.P. Lorenzo, T. G. Ryan Solid-State Electronics EngineeringApplied PhysicsN-type DopingGallium OxideSemiconductor Material	1978	41
The adatom/incipient hydrous oxide mediator model for reactions on silver in base L.D. Burke, T. G. Ryan Journal of Applied Electrochemistry Materials ScienceChemical EngineeringEngineeringSurface SciencePhysical Chemistry	1990	28
Pulse electron annealing of ion-implanted InP Donna E. Davies, J.P. Lorenzo, T. G. Ryan, Applied Physics Letters Materials ScienceSemiconductor TechnologyElectrical EngineeringIon ImplantationEngineering	1979	26
Radiolysis of water and water-d2 between 0 and 300.deg. K.N. Jha, T. G. Ryan, G. R. Freeman The Journal of Physical Chemistry Environmental RadiochemistryEngineeringDonut IconEnvironmental EngineeringAltmetric Attention Score	1975	24
Improved electrical mobilities from implanting InP at elevated temperatures Donna E. Davies, J. J. Comer, J.P. Lorenzo, Applied Physics Letters Materials ScienceElectrical EngineeringImplantable DeviceEngineeringThermomechanical Analysis	1979	23
Pulse annealing deficiencies in GaAs Donna E. Davies, J.P. Lorenzo, T. G. Ryan Applied Physics Letters SemiconductorsElectrical EngineeringPulse AnnealingEngineeringPoor Mobilities	1980	23

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