LOW-THRESHOLD LOC GaAs INJECTION LASERS

Abstract

We report new results with the large optical cavity (LOC) injection lasers previously described. It is shown that by narrowing the n region adjacent to the junction, the threshold current decreases without decreasing the differential quantum efficiency. Furthermore, epitaxial growth of all layers was used, and diffusion was avoided. Fabry-Perot mode threshold current densities as low as 1700 A/cm2 were obtained with differential quantum efficiencies of about 50% and power conversion efficiencies of 20% at room temperature.