Influence of Trapping and Detrapping Effects in Si(Li), Ge(Li) and CdTe Detectors

Abstract

Carrier capture and re-emission effects in semiconductor nuclear particle detectors are characterized by a trapping time τ+ and detrapping time τD. Measurement of these quantities as a function of temperature gives information on capture cross-sections a and activation energies, ET. Trapping and detrapping processes are field dependent. These effects have been investigated in Si(Li) and Ge(Li) detectors and are discussed in relation to operating temperature and detector resolution. The performance of Ge(Li) and CdTe detectors is evaluated in view of the influence of trapping effects.