SURFACE MORPHOLOGY OF <font>GaN</font> SURFACES DURING MOLECULAR BEAM EPITAXY

Abstract

The reconstruction and surface morphology of gallium nitride (0001) and [Formula: see text] surfaces are studied using scanning probe microscopy and reflection high energy electron diffraction. Results for bare GaN surfaces are summarized, and changes in the surface structure and morphology due to codeposition of indium or magnesium during growth are discussed.