Deep-level capacitance spectroscopy of nitrogen-doped VPE GaP

Abstract

The technique of deep-level capacitance spectroscopy was applied to a number of nitrogen-doped level VPE GaP samples. The thermal emission energies and electron and hole capture cross sections were determined for a dozen deep levels. Using these cross sections along with the measured defect concentrations, high excitation density and low-excitation-density minority-carrier lifetimes are calculated. These calculated values are at least one order of magnitude large than lifetimes determined from optical and SEM techniques. cross sections were determined for a dozen deep levels. Using these cross sections along with the measured defect concentrations, high excitation density, and low-excitation-density minority-carrier lifetimes are calculated. These calculated values are at least one order of magnitude larger than lifetimes determined from optical and SEM techniques.