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Thin-film channel waveguide electro-optic modulator in epitaxial BaTiO3
135
Citations
6
References
1997
Year
PhotonicsElectrical EngineeringOptical MaterialsEngineeringOptical PropertiesApplied PhysicsGuided-wave OpticThin-film ChannelEpitaxial Batio3Epitaxial GrowthOptoelectronicsElectro-optic ModulatorElectro-optics Device
We report on a thin-film channel waveguide electro-optic modulator fabricated in epitaxial BaTiO3 on MgO. Films had an effective dc electro-optic coefficient of reff∼50±5 pm/V and reff∼18±2 pm/V at 5 MHz for λ∼1.55 μm light. Extinction ratios of 14 dB were obtained. The electro-optic effect decreases to ∼60% of the dc value at 1 Hz, 50% of the dc value at 20 kHz, and ∼37% of the dc value at 5 MHz.
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