G.N. van den Hoven - Concepedia

Author

G.N. van den Hoven

Institute for Atomic and Molecular Physics

Also Known As

G. N. Van Den Hoven, G. N. van den Hoven, G.N. Van Den Hoven, G.N. Van den Hoven, G.N. van den Hoven, Gerlas N. van den Hoven

Publications

2.2K

Citations

H-Index

Concepts

All Affiliations

Institute for Atomic and Molecular Physics Delft University of Technology Eindhoven University of Technology University of Catania Philips (Netherlands)

About

G.N. van den Hoven is an author at Institute for Atomic and Molecular Physics specializing in engineering, optoelectronics, and applied physics.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	26	31	2.1K
2	Applied Physics	22	23	1.8K
3	Electrical Engineering	5	5	231
4	Chemistry	2	2	206
5	Natural Sciences	1	1	99

G.N. van den Hoven

Publications

2.1K

Citations

H-Index

Page 1

	Year	Citations
Net optical gain at 1.53 μm in Er-doped Al2O3 waveguides on silicon G.N. van den Hoven, R.J.I.M. Koper, Albert Polman, Applied Physics Letters Optical MaterialsEngineeringLaser ApplicationsEr-doped Al2o3 WaveguidesOptoelectronic Devices	1996	230
Photoluminescence characterization of Er-implanted Al2O3 films G.N. van den Hoven, E. Snoeks, Albert Polman, Applied Physics Letters Materials ScienceSemiconductorsAluminium NitrideOptical MaterialsEngineering	1993	184
Upconversion in Er-implanted Al2O3 waveguides G.N. van den Hoven, E. Snoeks, Albert Polman, Journal of Applied Physics Aluminium NitrideOptical MaterialsEngineeringLaser ApplicationsLaser Physics	1996	169
Erbium in crystal silicon: Optical activation, excitation, and concentration limits Albert Polman, G.N. van den Hoven, J. S. Custer, Journal of Applied Physics Optical MaterialsEngineeringCrystal Growth TechnologyLuminescent GlassOptoelectronic Devices	1995	125
Room-temperature luminescence from Er-implanted semi-insulating polycrystalline silicon S. Lombardo, S. U. Campisano, G.N. van den Hoven, Applied Physics Letters SemiconductorsLuminescence IntensityElectrical EngineeringElectronic DevicesOxygen Concentration	1993	107
Cooperative upconversion in erbium-implanted soda-lime silicate glass optical waveguides E. Snoeks, G.N. van den Hoven, Albert Polman, Journal of the Optical Society of America B PhotonicsOptical MaterialsEngineeringOptical PropertiesLuminescent Glass	1995	104
Erbium in oxygen-doped silicon: Optical excitation G.N. van den Hoven, Jung H. Shin, Albert Polman, Journal of Applied Physics Optical MaterialsEngineeringLuminescent GlassOptoelectronic DevicesChemistry	1995	99
Transmission of 8 DWDM channels at 20 Gb/s over 160 km of standard fiber using a cascade of semiconductor optical amplifiers L.H. Spiekman, J. M. Wiesenfeld, A.H. Gnauck, IEEE Photonics Technology Letters EngineeringTransmitter Booster-amplifiersFiber-optic CommunicationOptical AmplifierOptical Amplification	2000	98
Incorporation of high concentrations of erbium in crystal silicon Albert Polman, J. S. Custer, E. Snoeks, Applied Physics Letters Materials ScienceSemiconductorsHigh ConcentrationsEpitaxial GrowthEngineering	1993	92
Origin of the 1.54 μm luminescence of erbium-implanted porous silicon Jung H. Shin, G.N. van den Hoven, Albert Polman Applied Physics Letters Materials ScienceSemiconductorsOptical MaterialsEngineeringPhotoluminescence	1995	74

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