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Net optical gain at 1.53 μm in Er-doped Al2O3 waveguides on silicon
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1996
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Optical MaterialsEngineeringLaser ApplicationsEr-doped Al2o3 WaveguidesOptoelectronic DevicesOptical AmplifierIon ImplantationOrganic LasersOptical AmplificationOptical PropertiesLaser AmplifiersGuided-wave OpticOptical CommunicationPhotonicsEr-doped Al2o3Net Optical GainApplied PhysicsCooperative UpconversionOptoelectronics
A 4‑cm Er‑doped Al₂O₃ spiral waveguide amplifier was fabricated on a silicon substrate, ion‑implanted to 2.7×10²⁰ cm⁻³, integrated with wavelength‑division multiplexers in a 15 mm² area, and its performance matches a model incorporating cooperative upconversion and excited‑state absorption. Under 9 mW 1.48 µm pumping, the device achieves 2.3 dB net gain at 1.53 µm with a 3 mW threshold, and modeling predicts up to 20 dB gain for an optimized amplifier.
A 4 cm long Er-doped Al2O3 spiral waveguide amplifier was fabricated on a Si substrate, and integrated with wavelength division multiplexers within a total area of 15 mm2. When pumped with 9 mW 1.48 μm light from a laser diode, the amplifier shows 2.3 dB net optical gain at 1.53 μm. The gain threshold was 3 mW. The amplifier was doped with Er by ion implantation to a concentration of 2.7×1020 cm−3. The data agree well with calculations based on a model which includes the effects of cooperative upconversion and excited state absorption. For an optimized amplifier, net optical gain of 20 dB is predicted.